參數(shù)資料
型號(hào)： HB52R329E2
廠(chǎng)商： Hitachi,Ltd.
英文描述： 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述： 注冊(cè)使用256 MB SDRAM的內(nèi)存（256 MB的寄存同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 25/67頁(yè)
文件大?。?/td> 630K
代理商： HB52R329E2
HB52R329E2-D
25
DQMB Truth Table
CKE
Command
Symbol
n - 1
n
DQMB
Write enable/output enable
ENB
H
×
×
L
Write inhibit/output disable
Note:
H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
.
Write: I
DID
is needed.
Read: I
DOD
is needed.
MASK
H
H
The SDRAM module can mask input/output data by means of DQMB.
During reading, the output buffer is set to Low-Z by setting DQMB to Low, enabling data output. On the
other hand, when DQMB is set to High, the output buffer becomes High-Z, disabling data output.
During writing, data is written by setting DQMB to Low. When DQMB is set to High, the previous data is
held (the new data is not written). Desired data can be masked during burst read or burst write by setting
DQMB. For details, refer to the DQMB control section of the SDRAM module operating instructions.
CKE Truth Table
CKE
Current state
Command
n - 1
n
S
RE
CE
W
Address
Active
Clock suspend mode entry
H
L
H
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
Any
Clock suspend
L
L
×
×
Clock suspend
Clock suspend mode exit
L
H
Idle
Auto-refresh command (REF)
H
H
L
L
L
H
Idle
Self-refresh entry (SELF)
H
L
L
L
L
H
Idle
Power down entry
H
L
L
H
H
H
H
L
H
×
×
×
Self refresh
Self refresh exit (SELFX)
L
H
L
H
H
H
L
H
H
×
×
×
Power down
Power down exit
L
H
L
H
H
H
L
H
H
×
×
×
Note:
H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
.
Clock suspend mode entry:
The SDRAM module enters clock suspend mode from active mode by
setting CKE to Low. The clock suspend mode changes depending on the current status (1 clock before) as
shown below.
ACTIVE clock suspend:
This suspend mode ignores inputs after the next clock by internally maintaining
the bank active status.
相關(guān)PDF資料
PDF描述
HB52RD168DB 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM)
HB52RD328DC 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM)
HB52RF1289E2-75B x72 SDRAM Module
HB52RF1289E2 1 GB Registered SDRAM DIMM 128-Mword 】 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 】 4 Components) PC133 SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52R329E22-A6F 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x72 SDRAM Module
HB52R329E22-B6F 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x72 SDRAM Module
HB52R329E22-F 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM
HB52R329E2-B6 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x72 SDRAM Module
HB52R649E1U-A6B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
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