參數(shù)資料
型號: HB52R329E2
廠商: Hitachi,Ltd.
英文描述: 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述: 注冊使用256 MB SDRAM的內(nèi)存(256 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 11/67頁
文件大?。?/td> 630K
代理商: HB52R329E2
HB52R329E2-D
11
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to V
SS
V
T
–0.5 to V
+ 0.5
(
4.6 (max))
V
1
Supply voltage relative to V
SS
Short circuit output current
V
CC
Iout
–0.5 to +4.6
V
1
50
mA
Power dissipation
P
T
Topr
18.0
W
Operating temperature
0 to +55
°
C
°
C
Storage temperature
Note:
1. Respect to V
SS
Tstg
–50 to +100
DC Operating Conditions
(Ta = 0 to +55
°
C)
Parameter
Symbol
Min
Max
Unit
Notes
Supply voltage
V
CC
V
SS
V
IH
V
IL
3.0
3.6
V
1, 2
0
0
V
3
Input high voltage
2.0
V
CC
0.8
V
1, 4
Input low voltage
0
V
1, 5
Ambient illuminance
Notes: 1. All voltage referred to V
SS
2. The supply voltage with all V
CC
and V
CC
Q pins must be on the same level.
3. The supply voltage with all V
SS
and V
SS
Q pins must be on the same level.
4. V
IH
(max) = V
CC
+ 2.0 V for pulse width
3 ns at V
CC
.
5. V
IL
(min) = V
CC
– 2.0 V for pulse width
3 ns at V
SS
.
100
lx
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