| 型號(hào) | 廠商 | 描述 |
| irl2203 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A) |
| irl2203n 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A) |
| irl2203nl 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A) |
| irl2203ns 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A) |
| irl2703 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irl3803l 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A) |
| irl3803s 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A) |
| irl3803 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A) |
| irl510s 2 3 4 5 6 |
International Rectifier | RES 39R 1/10W 5% 0805 TF |
| irl540nl 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
| irl540ns 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
| irl540n 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irl540s 2 3 4 5 6 |
International Rectifier | HEXFET POWER MOSFET |
| irl5602s 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irl7nj3802 2 3 4 5 6 7 |
International Rectifier | HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| irld024 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A) |
| irli3215pbf 2 3 4 5 6 7 8 |
International Rectifier | 68/MDR/RECP/VERT PRS FIT/M2.6/SCW/30 MIN |
| irli520g 2 3 4 5 6 |
International Rectifier | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| irli540npbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irli640gpbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irliz34npbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irll014 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| irlms2002pbf 2 3 4 5 6 7 8 |
International Rectifier | 30V N-Channel PowerTrench MOSFET |
| irlms4502 2 3 4 5 6 7 |
International Rectifier | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| irlr120pbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
| irlr3410pbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:   |
| irlu3410pbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:   |
| irlr3705zpbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | AUTOMOTIVE MOSFET HEXFET Power MOSFET |
| irlu3705zpbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | AUTOMOTIVE MOSFET HEXFET Power MOSFET |
| irlr3715pbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | SMPS MOSFET |
| irlu3715pbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | SMPS MOSFET |
| irlr3715zpbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET Power MOSFET |
| irlr7821cpbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET Power MOSFET |
| irlu7821cpbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET Power MOSFET |
| irlr7843cpbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET Power MOSFET |
| irlu7843cpbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET Power MOSFET |
| irlr8103vpbf 2 3 4 5 6 7 8 |
International Rectifier | N-Channel Application-Specific MOSFETs |
| irlr8113pbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET Power MOSFET |
| irlu8113pbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET Power MOSFET |
| irlr8721pbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET Power MOSFET |
| irlu8721pbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:   |
| irlr9343pbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | DIGITAL AUDIO MOSFET |
| irlu9343-701pbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | DIGITAL AUDIO MOSFET |
| irlu9343pbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | DIGITAL AUDIO MOSFET |
| irlru3103pbf 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | HEXFET㈢ Power MOSFET |
| irlz14 2 3 4 5 6 7 8 9 10 |
International Rectifier | RES 1.50K OHM 1/16W .1% SMD 0402 |
| irlz14l 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A) |
| irlz14s 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A) |
| irlz14sl 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A) |
| irlz24nlpbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |