參數(shù)資料
型號： IRL540NL
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大小： 182K
代理商： IRL540NL
IRL540NS/L
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
T
J
= 25°C, I
F
= 18A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
190
1.1
1.3
290
1.7
V
ns
μC
Starting T
J
= 25°C, L = 1.9mH
R
G
= 25
, I
AS
= 18A. (See Figure 12)
I
SD
≤
18A, di/dt
≤
180A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRL540N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
S
D
G
Source-Drain Ratings and Characteristics
36
120
A
Parameter
Min. Typ. Max. Units
100
–––
–––
0.11
–––
––– 0.044
–––
––– 0.053
–––
––– 0.063
1.0
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
–––
81
–––
39
–––
62
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 18A
V
GS
= 5.0V, I
D
= 18A
V
GS
= 4.0V, I
D
= 15A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 18A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 18A
V
DS
= 80V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 18A
R
G
= 5.0
,
V
GS
= 5.0V
R
D
= 2.7
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
74
9.4
38
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1800 –––
350
170
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance
7.5
ns
I
DSS
Drain-to-Source Leakage Current
A
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