參數(shù)資料
型號(hào)： IRLL014
廠(chǎng)商： International Rectifier
英文描述： HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述： HEXFET功率MOSFET（馬鞍山的HEXFET功率場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 229K
代理商： IRLL014
Parameter
Max.
2.7
1.7
22
3.1
2.0
0.025
0.017
-/+10
100
2.7
0.31
4.5
-55 to + 150
300 (1.6mm from case)
Units
I
D
@ Tc = 25°C
I
D
@ Tc = 100°C
I
DM
P
D
@Tc = 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10 V
Continuous Drain Current, V
GS
@ 10 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
IRLL014
HEXFET
Power MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Logic-Level Gate Drive
l
R
DS
(on) Specified at V
GS
=4V & 5V
l
Fast Switching
l
Ease of Paralleling
PD - 90866A
S
D
G
V
DSS
= 60V
R
DS(on)
= 0.20
I
D
= 2.7A
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
2/1/99
Description
SOT-223
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
Parameter
Typ.
–––
–––
Max.
40
60
Units
R
θ
JC
R
θ
JA
Junction-to-PCB
Junction-to-Ambient. (PCB Mount)**
Thermal Resistance
°C/W
A
1
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLL014_10 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Power MOSFET
IRLL014N 制造商:International Rectifier 功能描述:MOSFET N LOGIC SOT-223
IRLL014NHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 2.8A 4-Pin(3+Tab) SOT-223 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 2.8A 4PIN SOT-223 - Rail/Tube
IRLL014NPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLL014NTR 功能描述:MOSFET N-CH 55V 2A SOT223 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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