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參數(shù)資料
| 型號： | IRL540NL |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 182K |
| 代理商： | IRL540NL |
IRL540NS/L
HEXFET
Power MOSFET
PD -91535
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.044
I
D
= 36A
Description
5/13/98
Parameter
Typ.
–––
–––
Max.
1.1
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
36
26
120
3.8
140
0.91
± 16
310
18
14
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
D2
TO-262
l
Advanced Process Technology
l
Surface Mount (IRL540NS)
l
Low-profile through-hole (IRL540NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRL540NS | HEXFET Power MOSFET |
| IRL540N | HEXFET Power MOSFET |
| IRL540S | HEXFET POWER MOSFET |
| IRL5602S | HEXFET Power MOSFET |
| IRL7NJ3802 | HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRL540NLPBF | 功能描述:MOSFET MOSFT 100V 36A 44mOhm 49.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL540NPBF | 功能描述:MOSFET MOSFT 36A 49.3nC 44mOhm LogLvAB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL540NS | 制造商:IR 功能描述:HEXFET 100v 36amp 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-263AB |
| IRL540NSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK |
| IRL540NSPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 44mOhms 49.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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