參數(shù)資料
型號： IRL2203NS
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 7.0mohm，身份證\u003d 116A）
文件頁數(shù)： 2/8頁
文件大?。?/td> 221K
代理商： IRL2203NS
IRL2203N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
2
www.irf.com
Parameter
Min. Typ. Max. Units
30
–––
–––
0.029 –––
–––
–––
–––
–––
1.0
–––
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
–––
160
–––
23
–––
66
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 60A
V
GS
= 4.5V, I
D
= 48A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 60A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 60A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 60A
R
G
= 1.8
V
GS
= 4.5V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
AS
= 60A, L = 0.16mH
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
7.0
10
–––
–––
25
250
100
-100
60
14
33
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
––– 1320
290
3290
1270
170
–––
–––
–––
pF
mJ
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 60A, V
GS
= 0V
T
J
= 25°C, I
F
= 60A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
56
110
1.2
84
170
V
ns
nC
Source-Drain Ratings and Characteristics
116
400
A
Starting T
J
= 25°C, L = 0.16mH
R
G
= 25
, I
AS
= 60A, V
GS
=10V (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤
60A, di/dt
≤
110A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
S
D
G
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
m
相關(guān)PDF資料
PDF描述
IRL2703 HEXFET Power MOSFET
IRL3803L Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
IRL3803S Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
IRL3803 Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
IRL510S RES 39R 1/10W 5% 0805 TF
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRL2203NS.IRL2203NL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:(161.16 k)
IRL2203NSHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 116A 3-Pin(2+Tab) D2PAK
IRL2203NSPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRL2203NSTRL 制造商:International Rectifier 功能描述:
IRL2203NSTRLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 116A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 116A 3PIN D2PAK - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*