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參數(shù)資料
| 型號(hào)： | IRLU9343PbF |
| 廠商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO MOSFET |
| 中文描述： | 數(shù)字音頻MOSFET的 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 310K |
| 代理商： | IRLU9343PBF |
2
www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
-55
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
5.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-52
93
150
–––
-3.7
–––
–––
–––
–––
–––
31
7.1
8.5
15
9.5
24
21
9.5
660
160
72
280
4.5
Max. Units
–––
–––
105
170
–––
–––
-2.0
-25
-100
100
–––
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
nA
g
fs
Q
g
Q
gs
Q
gd
Q
godr
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
L
D
S
V
GS
= -10V
I
D
= -14A
See Fig. 6 and 19
V
DD
= -28V, V
GS
= -10V
ns
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
nH
L
S
Internal Source Inductance
–––
7.5
–––
Avalanche Characteristics
Parameter
Units
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
A
mJ
Diode Characteristics
Parameter
Min.
–––
Typ.
–––
Max. Units
-20
I
S
@ T
C
= 25°C Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
–––
–––
-60
–––
–––
–––
–––
57
120
-1.2
86
180
V
ns
nC
V
GS
= -4.5V, I
D
= -2.7A
V
DS
= V
GS
, I
D
= -250μA
–––
See Fig. 14, 15, 17a, 17b
120
V
DS
= -55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
V
DS
= -25V, I
D
= -14A
V
DS
= -44V
I
D
= -14A
R
G
= 2.5
Typ.
Max.
= 1.0MHz, See Fig.5
V
GS
= 0V, V
DS
= 0V to -44V
V
GS
= 0V
V
DS
= -50V
T
J
= 25°C, I
F
= -14A
di/dt = 100A/μs
T
J
= 25°C, I
S
= -14A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.4A
MOSFET symbol
Conditions
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