| 型號 | 廠商 | 描述 |
| vn1310 2 3 4 |
ELAN Microelctronics Corp . | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| vn1316n2 2 3 4 |
SUPERTEX INC | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| vn1316n3 2 3 4 |
SUPERTEX INC | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
| vn1504 2 |
Supertex, Inc. | N-Channel Enhancement-Mode Vertical DMOS FET |
| vn1550nw 2 |
SUPERTEX INC | N-Channel Enhancement-Mode Vertical DMOS FETs |
| vn1550 2 |
Supertex, Inc. | N-Channel Enhancement-Mode Vertical DMOS FETs |
| vn16b011y 2 3 4 5 6 7 8 9 10 |
Single Peripheral Driver | |
| vn16b012y 2 3 4 5 6 7 8 9 10 |
Single Peripheral Driver | |
| vn16b(012y) 2 3 4 5 6 7 8 9 10 |
意法半導(dǎo)體 | Paired Cable; Number of Conductors:4; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:2; Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes |
| vn16b 2 3 4 5 6 7 8 9 10 |
意法半導(dǎo)體 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| vn16b(011y) 2 3 4 5 6 7 8 9 10 |
意法半導(dǎo)體 | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Red; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| vn16bsp 2 3 4 5 6 7 8 9 |
意法半導(dǎo)體 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| vn1706b 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 630MA I(D) | TO-39 | |
| vn1706d 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 700MA I(D) | TO-220AB | |
| vn1706l 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 220MA I(D) | TO-92 | |
| vn1706m 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 330MA I(D) | TO-237 | |
| vn1710m 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 250MA I(D) | TO-237 | |
| vn2001l 2 3 4 |
Vishay Intertechnology,Inc. | N-Channel 200-V (D-S) MOSFET |
| vn2010l 2 3 4 |
Vishay Intertechnology,Inc. | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓200V，夾斷電流0.19A的N溝道增強(qiáng)型MOSFET) |
| vn2010l 2 3 4 |
Vishay Intertechnology,Inc. | N-Channel 200-V (D-S) MOSFETs |
| vn2010l 2 3 4 |
N-Channel Enhancement-Mode MOS Transistors | |
| vn2018bcc 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018bci 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018bcm 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018bdc 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018bdi 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018bdm 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018pc 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018dm 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018di 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018dc 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018cm 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018ci 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018cc 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn2018bpc 2 3 |
Voltage-Feedback Operational Amplifier | |
| vn20an 2 3 4 5 6 7 8 9 10 11 |
意法半導(dǎo)體 | HIGH SIDE SMART POWER SOLID STATE RELAY |
| vn20n(012y) 2 3 4 5 6 7 8 9 10 11 |
意法半導(dǎo)體 | Belden Paired Telephone Cable, Length: 1000 feet, Wire Size: 24 AWG, Features: Unshielded, chrome PVC jacket |
| vn20nsp 2 3 4 5 6 7 8 9 10 11 |
||
| vn20n012y 2 3 4 5 6 7 8 9 10 11 |
Single Peripheral Driver | |
| vn20n011y 2 3 4 5 6 7 8 9 10 11 |
Single Peripheral Driver | |
| vn20ansp 2 3 4 5 6 7 8 9 10 11 |
Single Peripheral Driver | |
| vn20n(011y) 2 3 4 5 6 7 8 9 10 11 |
意法半導(dǎo)體 | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Red; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Conductor Plating:Tin; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| vn20n 2 3 4 5 6 7 8 9 10 11 |
意法半導(dǎo)體 | HIGH SIDE SMART POWER SOLID STATE RELAY |
| vn2106 2 3 4 |
Supertex, Inc. | N-Channel Enhancement-Mode Vertical DMOS FETs |
| vn2106n3 2 3 4 |
SUPERTEX INC | N-Channel Enhancement-Mode Vertical DMOS FETs |
| vn2110 2 3 4 |
ELAN Microelctronics Corp . | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| vn21sp 2 3 4 5 6 7 8 9 |
意法半導(dǎo)體 | HIGH SIDE SMART POWER SOLID STATE RELAY |
| vn21 2 3 4 5 6 7 8 9 10 11 |
意法半導(dǎo)體 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| vn220(012y) 2 3 4 5 6 7 8 9 10 |
意法半導(dǎo)體 | Paired Cable; Number of Conductors:50; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:25; Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes |
| vn220 2 3 4 5 6 7 8 9 10 |
意法半導(dǎo)體 | HIGH SIDE SMART POWER SOLID STATE RELAY |