參數(shù)資料
型號(hào): VN2001L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 200-V (D-S) MOSFET
中文描述: N溝道200 -五(副)MOSFET的
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 77K
代理商: VN2001L
VN2001L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72654
S-40246—Rev. A, 16-Feb-04
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
200
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2.0
3.0
4.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
1
A
T
J
= 55 C
10
On-State Drain Current
a
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1
A
Drain Source On Resistance
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 0.56 A
0.95
1.2
V
GS
= 6 V, I
D
= 0.54 A
1.0
1.3
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 0.56A
1.8
S
Diode Forward Voltage
a
V
SD
I
S
= 0.5 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
3.6
6
Gate-Source Charge
Q
gs
V
DS
= 90 V, V
GS
= 10 V, I
D
= 0.5 A
0.8
nC
Gate-Drain Charge
Q
gd
1.2
Gate Resistance
R
g
4
Turn-On Delay Time
t
d(on)
5.5
10
Rise Time
t
r
V
DD
= 100 V, R
L
= 200
0 5 A V
I
D
0.5 A, V
= 10 V
R
= 25
G
10
16
Turn-Off Delay Time
t
d(off)
22
40
ns
Fall Time
t
f
18
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 0.5 A, di/dt = 100 A/ s
28
45
Notes
a.
b.
Pulse test: PW
Guaranteed by design, not subject to production testing.
300 s duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
J
= 125 C
55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
3.5 V
4 V
4.5 V
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