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參數(shù)資料
| 型號： | VN1310 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強型場效應(yīng)管垂直的DMOS（擊穿電壓100V的，?溝道增強型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 28K |
| 代理商： | VN1310 |
7-192
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-39
TO-92
*
I
D
(continuous) is limited by max rated T
j.
0.4A
0.25A
1.4A
1.3A
3.0W
1.0W
41
125
125
170
0.4A
0.25A
1.4A
1.3A
Thermal Characteristics
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
VN1310
100
VN1306
60
V
V
GS
= 0V, I
D
= 1mA
VN1304
40
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 50mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 500mA
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.9
-5.0
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
1
μ
A
μ
A
100
I
D(ON)
ON-State Drain Current
0.25
0.6
0.50
1.4
R
DS(ON)
5.0
15
5.0
8.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.8
2
%/
°
C
120
m
Input Capacitance
27
35
Common Source Output Capacitance
13
15
pF
Reverse Transfer Capacitance
3
5
Turn-ON Delay Time
2
5
Rise Time
2
5
Turn-OFF Delay Time
2
6
Fall Time
2
5
Diode Forward Voltage Drop
1.0
1.3
V
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 0.5A
Reverse Recovery Time
350
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
A
V
DD
= 25V
I
D
= 500mA
R
GEN
= 25
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Switching Waveforms and Test Circuit
VN1304/VN1306/VN1310
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