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參數(shù)資料
| 型號： | VN220 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH SIDE SMART POWER SOLID STATE RELAY |
| 中文描述： | 高邊智能電源固態(tài)繼電器 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 74K |
| 代理商： | VN220 |
4/10
VN220 / VN220(011Y) / VN220(012Y)
1
FUNCTIONAL DESCRIPTION
The VN220 provides protection against a short circuit on
the output and senses the output current to detect an
open load. When one of these two faults is detected the
diagnostic output is taken low.
OPEN LOAD DETECTION
When the device is first turned on, only the auxiliary
DMOS device is turned on. If the load current remains
below 9mA (typical), the open load signal is active and
the diagnostic output is low. When the load current goes
above 9 mA the open load detection becomes inactive
and the diagnostic goes high. When the load current
exceeds 300 mA, the main DMOS (50 m
) turns on.
When the load current drops below 240 mA, the main
DMOS is turned off but no open load signal is generated
and the auxiliary DMOS is still turned on. If the load
current drops below 9mA, again the open load signal is
generated and the diagnostic output goes low.
SHORT CIRCUIT PROTECTION
Short circuit protection is achieved using the fast
response of the thermal shut-down circuit. The only
current limitation in this condition is the saturation current
of the DMOS devices and the external wiring resistance.
Under this condition the device can survive a short circuit
up to 30V across DMOS devices.
THERMAL PROTECTION
The
device
temperature by the thermal protection circuit. When the
device junction temperature exceeds the protection limit,
the output is latched off. Toturn on the output again, the
input signal must be taken low to reset the latch, then
high again to turn on the output. If the junction
temperature has not yet cooled below the lower limit set
by the thermal sensing hysteresis, the device will remain
latched off.
is
internally
protected
against
over
NOTE: When an open load defect appears (or disappears) the
state of the diagnostic output changes only after the filtering time
(t
ol
). See open load waveform diagrams.
相關PDF資料 |
PDF描述 |
|---|---|
| VN220(011Y) | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Green; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| VN2204N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2204ND | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2210 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強型垂直DMOS結構場效應管) |
| VN2210 | N-Channel Enhancement-Mode Vertical DMOS FETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VN220(011Y) | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN220(012Y) | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN220011Y | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN220012Y | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN2204N3 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
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