參數(shù)資料
型號(hào)： VN2110
廠商： ELAN Microelctronics Corp .
英文描述： N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓100V的，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 27K
代理商： VN2110
7-196
Package
I
D
(continuous)
=
I
D
(pulsed)
Power Dissipation*
@ T
C
= 25
°
C
1.0W
θ
jc
θ
ja
°
C/W
170
I
DR
I
DRM
°
C/W
125
TO-92
0.25A
1.0A
0.25A
1.0A
TO-236AB
0.2A
0.8A
0.36W (T
A
= 25
°
C)
200
350
0.2A
0.8A
I
D
(continuous) is limited by max rated T
j
.
*
Total for package.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
VN2110
100
V
I
D
= 1mA, V
GS
= 0V
VN2106
60
0.8
V
GS(th)
V
GS(th)
I
GSS
I
DSS
2.4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 75mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
=0.5A
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.8
-5.5
mV/
°
C
0.1
100
nA
Zero Gate Voltage Drain Current
1
μ
A
μ
A
100
I
D(ON)
R
DS(ON)
ON-State Drain Current
0.6
A
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
4.5
3.0
0.70
6.0
4.0
1.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
%/
°
C
150
400
m
Input Capacitance
35
50
Common Source Output Capacitance
13
25
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Reverse Transfer Capacitance
4
5
Turn-ON Delay Time
3
5
Rise Time
5
8
Turn-OFF Delay Time
6
9
Fall Time
5
8
Diode Forward Voltage Drop
1.2
1.8
V
I
SD
= 0.6A, V
GS
= 0V
I
SD
= 0.6A, V
GS
= 0V
Reverse Recovery Time
400
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
VN2106/VN2110
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Thermal Characteristics
V
DD
= 25V
I
D
= 0.6A
R
GEN
= 25
ns
相關(guān)PDF資料
PDF描述
VN21SP HIGH SIDE SMART POWER SOLID STATE RELAY
VN21 ISO HIGH SIDE SMART POWER SOLID STATE RELAY
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VN220 HIGH SIDE SMART POWER SOLID STATE RELAY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VN2110K1 功能描述:MOSFET 100V 4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN2110K1-G 功能描述:MOSFET 100V 4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN2110ND 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs
VN21-11-E 功能描述:電源開(kāi)關(guān) IC - 配電 ISO HI-SIDE SMRT PWR SOLID STATE RELAY RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VN21-12-E 功能描述:電源開(kāi)關(guān) IC - 配電 ISO HI-SIDE SMRT PWR SOLID STATE RELAY RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
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