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參數(shù)資料
| 型號(hào)： | VN2106N3 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 457K |
| 代理商： | VN2106N3 |
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2106
VN2110
Package Options
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
Commercial and Military versions available
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
High input impedance and high gain
Applications
Motor controls
Amplifiers
Power supply circuits
Converters
Switches
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Order Number / Package
BV
DSS
/
BV
DGS
R
DS(ON)
(max)
TO-92
TO-236AB*
Die
60V
100V
4.0
4.0
VN2106N3
—
–
—
VN2110ND
VN2110K1
MIL visual screening available
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Product marking for SOT-23:
N1A
where
= 2-week alpha date code
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
±
20V
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
* Distance of 1.6 mm from case for 10 seconds.
TO-236AB
(SOT-23)
top view
TO-92
S G D
S
D
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VN2110 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| VN21SP | HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN21 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN220(012Y) | Paired Cable; Number of Conductors:50; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:25; Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes |
| VN220 | HIGH SIDE SMART POWER SOLID STATE RELAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN2106N3-G | 功能描述:MOSFET 60V 4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2106N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2106N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2106N3-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2106N3-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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