參數(shù)資料
型號： VN20ANSP
英文描述： Single Peripheral Driver
中文描述： 單外設(shè)驅(qū)動
文件頁數(shù)： 1/11頁
文件大?。?/td> 193K
代理商： VN20ANSP
VN20N
HIGH SIDE SMART POWER SOLID STATE RELAY
I
OUTPUT CURRENT (CONTINUOUS): 33A @
T
c
=25
o
C
I
5V LOGIC LEVEL COMPATIBLE INPUT
I
THERMAL SHUT-DOWN
I
UNDER VOLTAGE SHUT-DOWN
I
OPEN DRAIN DIAGNOSTIC OUTPUT
I
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN20N is a monolithic device made using
SGS-THOMSON
Vertical
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
Intelligent
Power
September 1994
BLOCK DIAGRAM
TYPE
V
DSS
R
DS(on)
0.05
I
OUT
V
CC
VN20N
60 V
33 A
26 V
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical
PENTAWATT horizontal
PENTAWATT in-line
VN20N
VN20N (011Y)
VN20N (012Y)
1/11
相關(guān)PDF資料
PDF描述
VN20N(011Y) Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Red; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Conductor Plating:Tin; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
VN20N HIGH SIDE SMART POWER SOLID STATE RELAY
VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs
VN2106N3 N-Channel Enhancement-Mode Vertical DMOS FETs
VN2110 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VN20N 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY
VN20N(011Y) 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY
VN20N(012Y) 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY
VN20N011Y 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver
VN20N012Y 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver
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