參數(shù)資料
型號: XE8807AMI026TLF
廠商: Semtech
文件頁數(shù): 24/143頁
文件大?。?/td> 0K
描述: IC MCU LOW PWR MTP FLASH 32-TQFP
標準包裝: 1
系列: XE880x
應用: 感測機
核心處理器: Coolrisc816?
程序存儲器類型: 閃存(11 kB)
控制器系列: XE8000
RAM 容量: 512 x 8
接口: UART,USRT
輸入/輸出數(shù): 24
電源電壓: 2.4 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 32-TQFP
包裝: 標準包裝
供應商設備封裝: 32-TQFP(7x7)
產(chǎn)品目錄頁面: 585 (CN2011-ZH PDF)
配用: XE8000MP-ND - PROG BOARD AND PROSTART2 CARD
其它名稱: XE8807AMI026DKR
Semtech 2006
www.semtech.com
2-2
XE8806A/XE8807A
2.1
Absolute maximum ratings
Min.
Max.
Note
Voltage applied to VBAT with respect to VSS
-0.3
6.0
V
Voltage applied to VPP with respect to VSS
VBAT-0.3
12
V
Voltage applied to all pins except VPP and VBAT
VSS-0.3
VBAT+0.3
V
Storage temperature (ROM device or unprogrammed
flash device)
-55
150
°C
Storage temperature (programmed flash device)
-40
85
°C
Table 2-1. Absolute maximal ratings
Stresses beyond the absolute maximal ratings may cause permanent damage to the device. Functional operation
at the absolute maximal ratings is not implied. Exposure to conditions beyond the absolute maximal ratings may
affect the reliability of the device.
2.2
Operating range
Min.
Max.
Note
Voltage applied to VBAT with respect to VSS
2.4
5.5
V
Voltage applied to VBAT with respect to VSS during
the flash programming
4.5
5.5
V
1
Voltage applied to VPP with respect to VSS
VBAT
11.5
V
Voltage applied to all pins except VPP and VBAT
VSS
VBAT
V
Operating temperature range
-40
85
°C
Capacitor on VREG
0.8
1.2
F
Table 2-2. Operating range for the flash device
Note 1. During the programming of the device, the supply voltage should at least be equal to the supply voltage used during
normal operation, and temperature between 10°C and 40°C.
Min.
Max.
Note
VREG by-passed
1.2
5.5
V
Voltage applied to VBAT
with respect to VSS
VREG on
1.5
3.6
V
Voltage applied to all pins except VPP and VBAT
VSS
VBAT
V
Operating temperature range
-40
125
°C
Capacitor on VREG
0.1
1.2
F
1
Table 2-3. Operating range for the ROM device
Note 1.
The capacitor may be omitted when VREG is connected to VBAT.
All specifications in this document are valid for the complete operating range unless otherwise specified.
Min.
Max.
Note
Retention time at 85°C
10
years
1
Retention time at 55°C
100
years
1
Number of programming cycles
10
2
Table 2-4. Operating range of the Flash memory
Note 1. Valid only if programmed using a programming tool that is qualified
Note 2. Circuits can be programmed more than 10 times but in that case, the retention time is no longer guaranteed.
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