參數(shù)資料
型號(hào)： W25P80-VSFI-G
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 8M X 1 FLASH 2.7V PROM, PDSO16
封裝： 0.300 INCH, GREEN, PLASTIC, SOIC-16
文件頁(yè)數(shù)： 9/43頁(yè)
文件大?。?/td> 918K
代理商： W25P80-VSFI-G
W25P80 / W25P16 / W25P32
Publication Release Date: December 11, 2005
- 17 -
Revision J
9.2.5
Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable
instruction must previously have been executed for the device to accept the Write Status Register
Instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered by
driving /CS low, sending the instruction code “01h”, and then writing the status register data byte as
illustrated in figure 7. The Status Register bits are shown in figure 3 and described earlier in this data
sheet.
Only non-volatile Status Register bits SRP, BP2, BP1 and BP0 (bits 7, 4, 3 and 2) can be written to.
All other Status Register bit locations are read-only and will not be affected by the Write Status
Register instruction.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Write Status Register instruction will not be executed. After /CS is driven high, the self-timed
Write Status Register cycle will commence for a time duration of tW (See AC Characteristics). While
the Write Status Register cycle is in progress, the Read Status Register instruction may still accessed
to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a
0 when the cycle is finished and ready to accept other instructions again. After the Write Register
cycle has finished the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (BP2, BP1 and BP0) to be set for
protecting all, a portion, or none of the memory from erase and program instructions. Protected areas
become read-only (see Status Register Memory Protection table). The Write Status Register
instruction also allows the Status Register Protect bit (SRP) to be set. This bit is used in conjunction
with the Write Protect (/WP) pin to disable writes to the status register. When the SRP bit is set to a 0
state (factory default) the /WP pin has no control over the status register. When the SRP pin is set to a
1, the Write Status Register instruction is locked out while the /WP pin is low. When the /WP pin is
high the Write Status Register instruction is allowed.
Figure 7. Write Status Register Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W25Q16VSFIG 2M X 8 SPI BUS SERIAL EEPROM, PDSO16
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W25Q80VZPIG 1M X 8 SPI BUS SERIAL EEPROM, DSO8
W25X16AVDAIZ 2M X 8 FLASH 2.7V PROM, PDIP8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25P80VSI 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY
W25P80VSIG 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY
W25P80VSSI 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY
W25P80VSSIG 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
W25P80VSSIG T&R 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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