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參數(shù)資料
| 型號： | W25P80-VSFI-G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 8M X 1 FLASH 2.7V PROM, PDSO16 |
| 封裝： | 0.300 INCH, GREEN, PLASTIC, SOIC-16 |
| 文件頁數(shù)： | 20/43頁 |
| 文件大?。?/td> | 918K |
| 代理商： | W25P80-VSFI-G |
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W25P80 / W25P16 / W25P32
Publication Release Date: December 11, 2005
- 27 -
Revision J
9.2.15 Read Parameter Page (53h)
The Parameter Page is a 256-byte page of Flash memory that can be used for storing serial numbers,
revision information and configuration data that might typically be stored in an additional Serial
EEPROM memory. Because the Parameter Page is relatively small and separate from the array, the
erase time is significantly shorter than that of a sector erase (see tPE in AC Electrical Characteristics).
This makes it convenient for more frequent updates.
The Read Parameter Page instruction allows one or more bytes of the Parameter page to be read.
The instruction is initiated by driving the /CS pin low and then shifting the instruction code “53h”
followed by a 24-bit address (A23-A0) into the DI pin. Only the lower 8 address bits (A7-A0) are used,
the 16 upper most address bits (A23-A8) are ignored (don’t care). The code and address bits are
latched on the rising edge of the CLK pin. After the address is received, the data byte of the
addressed memory location will be shifted out on the DO pin at the falling edge of CLK with most
significant bit (MSB) first. The address is automatically incremented to the next higher address after
each byte of data is shifted out allowing for a continuous stream of data. When the end of the
Parameter page is reached the address will wrap to the beginning. The Read Parameter Page
instruction is shown in figure 18. If the Read Parameter Page instruction is issued while an Erase,
Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects
on the current cycle. The Read Parameter Page instruction allows clock rates from D.C. to a
maximum of fR (see AC Electrical Characteristics).
Figure 18. Read Parameter Page Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W25Q16VSFIG | 2M X 8 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q32DWZPIP | 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| W25Q80VZPIG | 1M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| W25X16AVDAIZ | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X40AVSSIG | 512K X 8 FLASH 2.7V PROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25P80VSI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSSI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSSIG | 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25P80VSSIG T&R | 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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