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參數(shù)資料
| 型號： | W25P80-VSFI-G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 8M X 1 FLASH 2.7V PROM, PDSO16 |
| 封裝： | 0.300 INCH, GREEN, PLASTIC, SOIC-16 |
| 文件頁數(shù)： | 3/43頁 |
| 文件大?。?/td> | 918K |
| 代理商： | W25P80-VSFI-G |
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W25P80 / W25P16 / W25P32
Publication Release Date: December 11, 2005
- 11 -
Revision J
9.1.3
Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3,
S2) that provide Write Protection control and status. Block Protect bits can be set using the Write
Status Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array
can be protected from Program and Erase instructions (see Status Register Memory Protection table).
The factory default setting for the Block Protection Bits is 0, none of the array protected. The Block
Protect bits can not be written to if the Status Register Protect (SRP) bit is set to 1 and the Write
Protect (/WP) pin is low.
9.1.4
Reserved Bits
Status register bit locations 5 and 6 are reserved for future use. Current devices will read 0 for these
bit locations. It is recommended to mask out the reserved bit when testing the Status Register. Doing
this will ensure compatibility with future devices.
9.1.5
Status Register Protect (SRP)
The Status Register Protect (SRP) bit is a non-volatile
read/write bit in the status register (S7) that can be used in conjunction with the Write Protect (/WP)
pin to disable writes to the status register. When the SRP bit is set to a 0 state (factory default) the
/WP pin has no control over the status register. When the SRP pin is set to a 1, the Write Status
Register instruction is locked out while the /WP pin is low. When the /WP pin is high the Write Status
Register instruction is allowed.
Figure 3. Status Register Bit Locations
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W25Q16VSFIG | 2M X 8 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q32DWZPIP | 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| W25Q80VZPIG | 1M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| W25X16AVDAIZ | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X40AVSSIG | 512K X 8 FLASH 2.7V PROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25P80VSI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSSI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSSIG | 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25P80VSSIG T&R | 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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