- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄203625 > W25P80-VSFI-G (WINBOND ELECTRONICS CORP) 8M X 1 FLASH 2.7V PROM, PDSO16 PDF資料下載
參數(shù)資料
| 型號(hào)： | W25P80-VSFI-G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 8M X 1 FLASH 2.7V PROM, PDSO16 |
| 封裝： | 0.300 INCH, GREEN, PLASTIC, SOIC-16 |
| 文件頁(yè)數(shù)： | 14/43頁(yè) |
| 文件大小： | 918K |
| 代理商： | W25P80-VSFI-G |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)當(dāng)前第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)
W25P80 / W25P16 / W25P32
Publication Release Date: December 11, 2005
- 21 -
Revision J
9.2.9
Sector Erase (D8h)
The Sector Erase instruction sets all memory within a specified sector to the erased state of all 1s
(FFh). A Write Enable instruction must be executed before the device will accept the Erase Sector
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin
low and shifting the instruction code “D8h” followed a 24-bit sector address (A23-A0) (see Figure 2).
The Sector Erase instruction sequence is shown in figure 11.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector
Erase instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Sector Erase
cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector
Erase instruction will not be executed if the addressed page is protected by the Block Protect (BP2,
BP1, BP0) bits (see Status Register Memory Protection table).
Figure 11. Sector Erase Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W25Q16VSFIG | 2M X 8 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q32DWZPIP | 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| W25Q80VZPIG | 1M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| W25X16AVDAIZ | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X40AVSSIG | 512K X 8 FLASH 2.7V PROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25P80VSI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSSI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY |
| W25P80VSSIG | 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25P80VSSIG T&R | 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。