參數(shù)資料
型號： W25P80-VSFI-G
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 8M X 1 FLASH 2.7V PROM, PDSO16
封裝： 0.300 INCH, GREEN, PLASTIC, SOIC-16
文件頁數(shù)： 13/43頁
文件大小： 918K
代理商： W25P80-VSFI-G
W25P80 / W25P16 / W25P32
- 20 -
9.2.8
Page Program (02h)
The Page Program instruction allows up to 256 bytes of data to be programmed at previously erased
to all 1s (FFh) memory locations. A Write Enable instruction must be executed before the device will
accept the Page Program Instruction (Status Register bit WEL must equal 1). The instruction is
initiated by driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address
(A23-A0) and at least two data bytes, into the DI pin. Because the W25P80/16/32 programs in
increments of one word (two bytes) at a time the 24-bit address (A23-A0) must be an even address
(A0 must equal 0). The /CS pin must be held low for the entire length of the instruction while data is
being sent to the device. The Page Program instruction sequence is shown in figure 10.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address
bits) should be set to 0. If the last address byte is not zero, and the number of clocks exceed the
remaining page length, the addressing will wrap to the beginning of the page. Less than 256 bytes can
be programmed without having any effect on other bytes within the same page. If more than 256 bytes
are sent to the device the addressing will wrap to the beginning of the page and overwrite previously
sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last
byte has been latched. If this is not done the Page Program instruction will not be executed. After /CS
is driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See
AC Characteristics). While the Page Program cycle is in progress, the Read Status Register
instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during
the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Page Program instruction will not be executed if the
addressed page is protected by the Block Protect (BP2, BP1, BP0) bits (see Status Register Memory
Protection table).
Figure 10. Page Program Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W25Q16VSFIG 2M X 8 SPI BUS SERIAL EEPROM, PDSO16
W25Q32DWZPIP 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8
W25Q80VZPIG 1M X 8 SPI BUS SERIAL EEPROM, DSO8
W25X16AVDAIZ 2M X 8 FLASH 2.7V PROM, PDIP8
W25X40AVSSIG 512K X 8 FLASH 2.7V PROM, PDSO8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25P80VSI 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY
W25P80VSIG 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY
W25P80VSSI 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT AND 16M-BIT SERIAL FLASH MEMORY
W25P80VSSIG 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
W25P80VSSIG T&R 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*