參數(shù)資料
型號(hào)： NT5DS64M8BF-6KI
廠商： NANYA TECHNOLOGY CORP
元件分類： DRAM
英文描述： DDR DRAM, PBGA60
封裝： 1 MM PITCH, WBGA-60
文件頁(yè)數(shù)： 13/79頁(yè)
文件大?。?/td> 6238K
代理商： NT5DS64M8BF-6KI
NT5DS128M4BF
NT5DS128M4BT
NT5DS128M4BG
NT5DS128M4BS
NT5DS64M8BF
NT5DS64M8BT
NT5DS64M8BG
NT5DS64M8BS
NT5DS32M16BF
NT5DS32M16BT
NT5DS32M16BG
NT5DS32M16BS
512Mb DDR SDRAM
REV 1.3
11/2007
20
NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Auto Refresh
Auto Refresh is used during normal operation of the DDR SDRAM and is analogous to CAS Before RAS (CBR) Refresh in pre-
vious DRAM types. This command is nonpersistent, so it must be issued each time a refresh is required.
The refresh addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care” during an Auto
Refresh command. The 512Mb DDR SDRAM requires Auto Refresh cycles at an average periodic interval of 7.8
s (maximum).
Self Refresh
The Self Refresh command can be used to retain data in the DDR SDRAM, even if the rest of the system is powered down.
When in the self refresh mode, the DDR SDRAM retains data without external clocking. The Self Refresh command is initiated
as an Auto Refresh command coincident with CKE transitioning low. The DLL is automatically disabled upon entering Self
Refresh, and is automatically enabled upon exiting Self Refresh (200 clock cycles must then occur before a Read command can
be issued). Input signals except CKE (low) are “Don’t Care” during Self Refresh operation.
The procedure for exiting self refresh requires a sequence of commands. CK (and CK) must be stable prior to CKE returning
high. Once CKE is high, the SDRAM must have NOP commands issued for tXSNR because time is required for the completion of
any internal refresh in progress. A simple algorithm for meeting both refresh and DLL requirements is to apply NOPs for 200
clock cycles before applying any other command.
相關(guān)PDF資料
PDF描述
NT5SE8M16DS-6K 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
NT5SV8M8DT-7 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
NTC1111-20MHZ Analog IC
NTC1111-SERIES Analog IC
NTC1120-12.8MHZ Analog IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NT5S10001BA20 功能描述:金屬膜電阻器 - 透孔 NT5 S 10K 0,1% AM500 e3 RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk
NT5S10001FA20 功能描述:金屬膜電阻器 - 透孔 NT5 S 10K 1% AM500 e3 RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk
NT5S10002BA20 功能描述:金屬膜電阻器 - 透孔 NT5 S 100K 0,1% AM500 e3 RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk
NT5S131R6BA20 功能描述:金屬膜電阻器 - 透孔 NT5 S 131U6 0,1% AM500 e3 RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk
NT5S15000FA20 功能描述:金屬膜電阻器 - 透孔 NT5 S 1K5 1% AM500 e3 RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*