參數(shù)資料
型號: MT55L1MY18P
廠商: Micron Technology, Inc.
英文描述: 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器)
中文描述: 16Mb的:1梅格× 18,流量通過ZBT SRAM的(16Mb的流通式同步靜態(tài)存儲器)
文件頁數(shù): 29/34頁
文件大?。?/td> 460K
代理商: MT55L1MY18P
29
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
IDENTIFICATION REGISTER DEFINITIONS
INSTRUCTION FIELD
REVISION NUMBER
(31:28)
DEVICE DEPTH
(27:23)
DEVICE WIDTH
(22:18)
MICRON DEVICE ID
(17:12)
MICRON JEDEC ID
CODE (11:1)
ID Register Presence
Indicator (0)
512K x 18
xxxx
DESCRIPTION
Reserved for version number.
00111
Defines depth of 256K or 512K words.
00011
Defines width of x18 or x36 bits.
xxxxxx
Reserved for future use.
00000101100
Allows unique identification of SRAM vendor.
1
Indicates the presence of an ID register.
SCAN REGISTER SIZES
REGISTER NAME
Instruction
Bypass
ID
Boundary Scan
BIT SIZE
3
1
32
68
INSTRUCTION CODES
INSTRUCTION
EXTEST
CODE
000
DESCRIPTION
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant.
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operations.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload
function and is therefore not 1149.1-compliant.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
IDCODE
001
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
相關PDF資料
PDF描述
MT55V1MV18P 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器)
MT55L512L18F 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256L32F 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256L36F 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256V32F 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
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