參數(shù)資料
型號(hào)： MT55L1MY18P
廠商： Micron Technology, Inc.
英文描述： 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
中文描述： 16Mb的：1梅格× 18，流量通過ZBT SRAM的（16Mb的流通式同步靜態(tài)存儲(chǔ)器）
文件頁數(shù)： 20/34頁
文件大?。?/td> 460K
代理商： MT55L1MY18P
20
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
Q
50
V = 1.5V
Z = 50
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
3.3V V
DD
, 3.3V I/O AC TEST CONDITIONS
Input pulse levels ................. V
IH
= (V
DD
/2.2) + 1.5V
....................V
IL
= (V
DD
/2.2) - 1.5V
Input rise and fall times..................................... 1ns
Input timing reference levels..................... V
DD
/2.2
Output reference levels ............................V
DD
Q/2.2
Output load ............................. See Figures 1 and 2
LOAD DERATING CURVES
Micron 1 Meg x 18, 512K x 32, and 512K x 36
SyncBurst SRAM timing is dependent upon the capaci-
tive loading on the outputs.
Consult the factory for copies of I/O current versus
voltage curves.
Q
50
V = 1.25V
Z = 50
Figure 3
Q
1,538
1,667
5pF
+2.5V
Figure 4
3.3V V
DD
, 2.5V I/O AC TEST CONDITIONS
Input pulse levels ............. V
IH
= (V
DD
/2.64) + 1.25V
................V
IL
= (V
DD
/2.64) - 1.25V
Input rise and fall times..................................... 1ns
Input timing reference levels................... V
DD
/2.64
Output reference levels ...............................V
DD
Q/2
Output load ............................. See Figures 3 and 4
3.3V I/O Output Load Equivalents
2.5V I/O Output Load Equivalents
2.5V V
DD
, 2.5V I/O AC TEST CONDITIONS
Input pulse levels .................. V
IH
= (V
DD
/2) + 1.25V
.....................V
IL
= (V
DD
/2) - 1.25V
Input rise and fall times..................................... 1ns
Input timing reference levels........................ V
DD
/2
Output reference levels ...............................V
DD
Q/2
Output load ............................. See Figures 3 and 4
相關(guān)PDF資料
PDF描述
MT55V1MV18P 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L512L18F 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L256L32F 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L256L36F 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L256V32F 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT55L1MY18PT-10 制造商:Cypress Semiconductor 功能描述:1MX18 SRAM PLASTIC TQFP 3.3V P
MT55L1MY18PT-6 制造商:Cypress Semiconductor 功能描述:1MX18 SRAM PLASTIC TQFP 3.3V P 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT55L256L18F1F-10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT55L256L18F1T-11 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT55L256L18F1T-12 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
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