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參數(shù)資料
| 型號： | MT55L1MY18P |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器) |
| 中文描述： | 16Mb的：1梅格× 18，流量通過ZBT SRAM的（16Mb的流通式同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 22/34頁 |
| 文件大小： | 460K |
| 代理商： | MT55L1MY18P |
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22
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
READ/WRITE TIMING
WRITE
D(A1)
1
2
3
4
5
6
7
8
9
CLK
tKHKH
t
KLKH
t
KHKL
10
CE#
t
KHCX
t
CVKH
R/W#
CKE#
t
KHEX
t
EVKH
BWx#
ADV/LD#
t
KHAX
t
AVKH
ADDRESS
A1
A2
A3
A4
A5
A6
A7
t
KHDX
t
DVKH
DQ
COMMAND
t
KHQX1
D(A1)
D(A2)
D(A5)
Q(A4)
Q(A3)
D(A2+1)
t
KHQX
t
KHQZ
t
KHQV
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
OE#
t
GLQV
t
GLQX
t
GHQZ
t
KHQX
DON’T CARE
UNDEFINED
Q(A6)
Q(A4+1)
NOTE:
1. For this waveform, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
-6
-7.5
-10
SYMBOL
t
GHQZ
t
AVKH
t
EVKH
t
CVKH
t
DVKH
t
KHAX
t
KHEX
t
KHCX
t
KHDX
MIN
MAX
3.5
MIN
MAX
4.2
MIN
MAX
5.0
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
1.7
1.7
1.7
1.7
0.5
0.5
0.5
0.5
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
READ/WRITE TIMING PARAMETERS
-6
-7.5
-10
SYMBOL
t
KHKH
f
KF
t
KHKL
t
KLKH
t
KHQV
t
KHQX
t
KHQX1
t
KHQZ
t
GLQV
t
GLQX
MIN
6.0
MAX
MIN
7.5
MAX
MIN
10
MAX
UNITS
ns
MHz
ns
ns
ns
ns
ns
ns
ns
ns
166
133
100
1.7
1.7
2.0
2.0
3.2
3.2
3.5
4.2
5.0
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
3.5
3.5
3.5
4.2
3.5
5.0
0
0
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT55V1MV18P | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器) |
| MT55L512L18F | 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256V32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55L1MY18PT-10 | 制造商:Cypress Semiconductor 功能描述:1MX18 SRAM PLASTIC TQFP 3.3V P |
| MT55L1MY18PT-6 | 制造商:Cypress Semiconductor 功能描述:1MX18 SRAM PLASTIC TQFP 3.3V P 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55L256L18F1F-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55L256L18F1T-11 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55L256L18F1T-12 | 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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