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參數(shù)資料
| 型號： | MT55L1MY18P |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器) |
| 中文描述： | 16Mb的：1梅格× 18，流量通過ZBT SRAM的（16Mb的流通式同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 27/34頁 |
| 文件大?。?/td> | 460K |
| 代理商： | MT55L1MY18P |
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16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
tTLTH
Test Clock
(TCK)
1
2
3
4
5
6
Test Mode Select
(TMS)
tTHTL
Test Data-Out
(TDO)
tTHTH
Test Data-In
(TDI)
tTHMX
tMVTH
tTHDX
tDVTH
tTLOX
tTLOV
DON’T CARE
UNDEFINED
TAP TIMING
TAP AC ELECTRICAL CHARACTERISTICS
(Notes 1, 2) (+20oC
￡
T
J
￡
+100oC; +2.4V
￡
V
DD
￡
+2.6V)
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
TCK LOW to TDO unknown
TCK LOW to TDO valid
TDI valid to TCK HIGH
TCK HIGH to TDI invalid
Setup Times
TMS setup
Capture setup
Hold Times
TMS hold
Capture hold
SYMBOL
MIN
MAX
UNITS
t
THTH
f
TF
t
THTL
t
TLTH
100
ns
10
MHz
ns
ns
40
40
t
TLOX
t
TLOV
t
DVTH
t
THDX
0
ns
ns
ns
ns
20
10
10
t
MVTH
t
CS
10
10
ns
ns
t
THMX
t
CH
10
10
ns
ns
NOTE:
1.
t
CS and
t
CH refer to the setup and hold time requirements of latching data from the boundary scan register.
2. Test conditions are specified using the load in Figure 7.
BY PASS
When the BYPASS instruction is loaded in the in-
struction register and the TAP is placed in a Shift-DR
state, the bypass register is placed between TDI and
TDO. The advantage of the BYPASS instruction is that
it shortens the boundary scan path when multiple
devices are connected together on a board.
RESERVED
These instruction are not implemented but are re-
served for future use. Do not use these instructions.
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| MT55V1MV18P | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器) |
| MT55L512L18F | 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256V32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55L1MY18PT-10 | 制造商:Cypress Semiconductor 功能描述:1MX18 SRAM PLASTIC TQFP 3.3V P |
| MT55L1MY18PT-6 | 制造商:Cypress Semiconductor 功能描述:1MX18 SRAM PLASTIC TQFP 3.3V P 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55L256L18F1F-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55L256L18F1T-11 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55L256L18F1T-12 | 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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