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型號(hào)：	MQ80C32-12SBD
廠商：	TEMIC SEMICONDUCTORS
元件分類：	微控制器/微處理器
英文描述：	8-BIT, 12 MHz, MICROCONTROLLER, CQFP44
文件頁(yè)數(shù)：	433/604頁(yè)
文件大?。?/td>	22337K
代理商：	MQ80C32-12SBD

42073A-MCU Wireless-02/13

ATmega2564/1284/644RFR2

Since the Flash is organized in pages (see "Table 31-7" on page 505), the Program

Counter can be treated as having two different sections. One section, consisting of the

least significant bits, is addressing the words within a page, while the most significant

bits are addressing the pages. This is shown in Figure 30-3 below. Note that the Page

Erase and Page Write operations are addressed independently. Therefore it is of major

importance that the Boot Loader software addresses the same page in both the Page

Erase and Page Write operation. Once a programming operation is initiated, the

address is latched and the Z-pointer can be used for other operations.

The (E)LPM instruction uses the Z-pointer to store the address. Since this instruction

addresses the Flash byte-by-byte, also bit Z0 of the Z-pointer is used.

Figure 30-3. Addressing the Flash during SPM

PROGRAM MEMORY

Z - REGISTER

WORD ADDRESS

WITHIN A PAGE

PAGE ADDRESS

WITHIN THE FLASH

INSTRUCTION WORD

PCWORD[PAGEMSB:0]:

1. The different variables used in Figure 30-3 above are listed in

30.6 Self-Programming the Flash

The program memory is updated in a page by page fashion. Before programming a

page with the data stored in the temporary page buffer, the page must be erased. The

temporary page buffer is filled one word at a time using SPM. The buffer must be filled

before the Page Write command.

Required sequence for self-programming the Flash:

Perform a Page Erase,

Fill temporary page buffer,

Perform a Page Write;

If only a part of the page needs to be changed, the rest of the page must be stored

before the erase, and then be rewritten. The temporary page buffer can be accessed in

a random sequence. It is essential that the page address used in both the Page Erase

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