參數(shù)資料
型號: MC56F8000RM
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 16-bit Digital Signal Controllers
中文描述: 16位數(shù)字信號控制器
文件頁數(shù): 93/124頁
文件大?。?/td> 1880K
代理商: MC56F8000RM
General Characteristics
56F8013 Technical Data, Rev. 2
Freescale Semiconductor
Preliminary
93
10.1.1
ElectroStatic Discharge (ESD) Model
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
2. Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal.
3. Per JEDEC JESC51-6 with the board horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is
measured on the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method
1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per
JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT.
7. See
Section 12.1
for more details on thermal design considerations.
Table 10-2 56F8013 ESD Protection
Characteristic
Min
Typ
Max
Unit
ESD for Human Body Model (HBM)
2000
V
ESD for Machine Model (MM)
200
V
ESD for Charge Device Model (CDM)
750
V
Table 10-3 LQFP Package Thermal Characteristics
6
Characteristic
Comments
Symbol
Value
(LQFP)
Unit
Notes
Junction to ambient
Natural convection
Single layer board
(1s)
R
θ
JA
74
°C/W
1,2
Junction to ambient
Natural convection
Four layer board
(2s2p)
R
θ
JMA
50
°C/W
1,3
Junction to ambient
(@200 ft/min)
Single layer board
(1s)
R
θ
JMA
67
°C/W
1,3
Junction to ambient
(@200 ft/min)
Four layer board
(2s2p)
R
θ
JMA
46
°C/W
1,3
Junction to board
R
θ
JB
23
°C/W
4
Junction to case
R
θ
JC
20
°C/W
5
Junction to package top
Natural Convection
Ψ
JT
4
°C/W
6
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