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參數(shù)資料
| 型號(hào)： | KAB02D100M-TLGP |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel |
| 中文描述： | 多芯片封裝存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 65/72頁(yè) |
| 文件大?。?/td> | 1378K |
| 代理商： | KAB02D100M-TLGP |
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KAB0xD100M - TxGP
Revision 1.11
August 2003
- 65 -
MCP MEMORY
SEC Only
U
t
RAM AC CHARACTERISTICS
(Vcc
U
=2.7~3.1V, T
A
=-25 to 85
°
C)
1. The limitation in continuous write operation is up to 50 times. If you want to write continuously over 50 times, please refer to the technical note.
Parameter List
Symbol
Speed Bins
Units
85ns
1)
Min
Max
Read
Read Cycle Time
t
RC
85
-
ns
Address Access Time
t
AA
-
85
ns
Chip Select to Output
t
CO
-
85
ns
Output Enable to Valid Output
t
OE
-
40
ns
UB, LB Access Time
t
BA
-
85
ns
Chip Select to Low-Z Output
t
LZ
10
-
ns
UB, LB Enable to Low-Z Output
t
BLZ
10
-
ns
Output Enable to Low-Z Output
t
OLZ
5
-
ns
Chip Disable to High-Z Output
t
HZ
0
25
ns
UB, LB Disable to High-Z Output
t
BHZ
0
25
ns
Output Disable to High-Z Output
t
OHZ
0
25
ns
Output Hold from Address Change
t
OH
5
-
ns
Write
Write Cycle Time
t
WC
85
-
ns
Chip Select to End of Write
t
CW
70
-
ns
Address Set-up Time
t
AS
0
-
ns
Address Valid to End of Write
t
AW
70
-
ns
UB, LB Valid to End of Write
t
BW
70
-
ns
Write Pulse Width
t
WP
60
-
ns
Write Recovery Time
t
WR
0
-
ns
Write to Output High-Z
t
WHZ
0
25
ns
Data to Write Time Overlap
t
DW
35
-
ns
Data Hold from Write Time
t
DH
0
-
ns
End Write to Output Low-Z
t
OW
5
-
ns
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| KAB02D100M-TNGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
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