參數(shù)資料
型號： KAB02D100M-TLGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
中文描述： 多芯片封裝存儲器
文件頁數(shù)： 22/72頁
文件大?。?/td> 1378K
代理商： KAB02D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 22 -
MCP MEMORY
SEC Only
Figure 10. Block Group Protection & Unprotection Algorithms
NOTE:
All blocks must be protected before unprotect operation is executing.
Block Protect
Algorithm
Set up Block Group
address
Block Group Protect:
Write 60H to Block
Group address with
A6=0,A1=1
A0=0
Wait 150
μ
s
Verify Block Group
Protect:Write 40H to
Block Group address
with A6=0,
A1=1,A0=0
Read from
Block Group address
with A6=0,
A1=1,A0=0
Data=01h
Protect another
Block Group
Remove V
ID
from RESET
Write RESET
command
END
Wait 1
μ
s
First Write
Cycle=60h
Temporary Block Group
Unprotect Mode
Block Group Unprotect
Write 60H
with
A6=1,A1=1
A0=0
Wait 15ms
Verify Block Group
Unprotect:Write 40H to
Block Group address
with A6=1,
A1=1,A0=0
Read from
Block Group address
with A6=1,
A1=1,A0=0
Data=00h
Last Block Group
verified
Remove V
ID
from RESET
Write RESET
command
END
No
Increment
COUNT
COUNT
=1000
Device failed
No
Yes
Yes
No
No
Yes
Algorithm
Increment
COUNT
COUNT
=25
Device failed
No
Yes
No
All Block Groups
Protected
No
Block Group <i>, i= 0
START
COUNT = 1
RESET=V
ID
Yes
Yes
Yes
No
Block Group
Protection
Yes
No
Yes
Set up next Block
Group address
Reset
COUNT=1
Block Unprotect
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