參數(shù)資料
型號(hào)： KAB02D100M-TLGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
中文描述： 多芯片封裝存儲(chǔ)器
文件頁數(shù)： 40/72頁
文件大?。?/td> 1378K
代理商： KAB02D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 40 -
MCP MEMORY
SEC Only
Figure 24. Flash Erase Flow Chart
Start
DQ 6 = 1
or R/B = 1
DQ 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
NAND Flash Technical Notes
Figure 25. Block Replacement
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, Copy the 1st ~ (n-1)th data to the same location of the Block ’B’.
* Step4
Do not further erase Block ’A’ by creating a ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
1
2
{
1st
(n-1)th
nth
(page)
{
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