參數(shù)資料
型號: KAB01D100M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
中文描述: 多芯片封裝存儲器
文件頁數(shù): 55/72頁
文件大?。?/td> 1378K
代理商: KAB01D100M
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 55 -
MCP MEMORY
SEC Only
Data Polling During Internal Routine Operation
NOR Flash SWITCHING WAVEFORMS
Parameter
Symbol
70ns
80ns
Unit
Min
Max
Min
Max
Program/Erase Valid to R/B
R
Delay
t
BUSY
90
-
90
-
ns
Chip Enable Access Time
t
CE
-
70
-
80
ns
Output Enable Time
t
OE
-
25
-
25
ns
CE
R
& OE Disable Time
t
DF
-
16
-
16
ns
Output Hold Time from Address, CE
R
or OE
t
OH
0
-
0
-
ns
OE Hold Time
t
OEH2
10
-
10
-
ns
OE
t
CE
t
OEH2
CE
R
DQ7
WE
t
OE
HIGH-Z
t
DF
NOTE:
*DQ7=Vaild Data (The device has completed the internal operation).
DQ7
*DQ7 = Valid Data
t
OH
t
PGM
or t
BERS
HIGH-Z
Valid Data
DQ0-DQ6
Data In
Data In
WE
R/B
R
Timing Diagram During Program/Erase Operation
The rising edge of the last WE signal
CE
R
R/B
R
t
BUSY
Entire progrming
or erase operation
Status Data
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