參數(shù)資料
型號: KAB01D100M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
中文描述: 多芯片封裝存儲(chǔ)器
文件頁數(shù): 35/72頁
文件大?。?/td> 1378K
代理商: KAB01D100M
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 35 -
MCP MEMORY
SEC Only
Figure 18. Read ID Operation
READ ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Two read cycles sequentially output the manufacture code(ECh), and the device code (53h) respectively. The command regis-
ter remains in Read ID mode until further commands are issued to it. Figure 18 shows the operation sequence.
Figure 19. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 17 for device status after reset operation. If the device is
already in reset state, new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Reset command is not necessary for normal operation. Refer to Figure 19 below.
Table 17. Device Status
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
DQ
x
R/B
F
t
RST
CE
F
CLE
I/O
x
ALE
RE
WE
90h
00h
ECh
Address. 1cycle
Maker code
Device code
t
CEA
t
AR1
t
REA
53h
t
WHR
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