參數(shù)資料
型號(hào)： KAB01D100M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
中文描述： 多芯片封裝存儲(chǔ)器
文件頁數(shù)： 28/72頁
文件大?。?/td> 1378K
代理商： KAB01D100M
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 28 -
MCP MEMORY
SEC Only
Table 14. Common NOR Flash Memory Interface Code
NOTE:
1. The number of blocks in Bank2 is device dependent.
KAB02D100/KAB04D100(16Mb/48Mb) = 60h (96blocks)
KAB01D100/KAB03D100(32Mb/32Mb ) = 40h (64blocks)
Description
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Query-unique ASCII string "PRI"
40H
41H
42H
80H
82H
84H
0050H
0052H
0049H
Major version number, ASCII
43H
86H
0030H
Minor version number, ASCII
44H
88H
0030H
Address Sensitive Unlock(Bits 1-0)
0 = Required, 1= Not Required
Silcon Revision Number(Bits 7-2)
45H
8AH
0000H
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
46H
8CH
0002H
Block Protect
0 = Not Supported, 1 = Supported
47H
8EH
0001H
Block Temporary Unprotect 00 = Not Supported, 01 = Supported
48H
90H
0001H
Block Protect/Unprotect scheme 04 = K8D1x16U mode
49H
92H
0004H
Simultaneous Operation (1)
00 = Not Supported, XX = Number of Blocks in Bank2
4AH
94H
00XXH
Burst Mode Type 00 = Not Supported, 01 = Supported
4BH
96H
0000H
Page Mode Type
00=Not supported, 01=4word page, 02=8word page
4CH
98H
0000H
ACC(Acceleration) Supply Minimum
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV
4DH
9AH
0085H
ACC(Acceleration) Supply Maximum
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV
4EH
9CH
00C5H
Top/Bottom Boot Block Flag
02H = Bottom Boot , 03H = Top Boot
4FH
9EH
000XH
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