參數(shù)資料
型號: KAB01D100M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
中文描述: 多芯片封裝存儲器
文件頁數(shù): 14/72頁
文件大?。?/td> 1378K
代理商: KAB01D100M
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 14 -
MCP MEMORY
SEC Only
NOTES:
1. RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data
DA : Dual Bank Address (A20 - A21), BA : Block Address (A12 - A21), X = Don’t care .
2. To terminate the Autoselect Mode, it is necessary to write Reset command to the register.
3. The 4th cycle data of Autoselect mode is output data.
The 3rd and 4th cycle bank addresses of Autoselect mode must be same.
4. The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode.
5. The Erase Suspend command is applicable only to the Block Erase operation.
6. Command is valid when the device is in read mode or Autoselect mode.
7. DQ8 - DQ15 are don’t care in command sequence, but RD and PD is excluded.
8. A11 - A21 are also don’t care, except for the case of special notice.
Table 6. NOR Flash Memory Autoselect Codes
NOTES:
1. L=Logic Low=V
IL
, H=Logic High=V
IH
, DA=Dual Bank Address, BA=Block Address, X=Don’t care
.
2. Secode Block : Security Code Block.
Description
DQ8 to DQ15
DQ7 to DQ0
BYTE = V
IH
BYTE = V
IL
Manufacturer ID
X
X
ECH
Device Code KAB02D100 (Top Boot Block)
22H
X
E0H
Device Code KAB01D100 (Bottom Boot Block)
22H
X
E2H
Device Code KAB04D100 (Top Boot Block)
22H
X
E1H
Device Code KAB03D100 (Bottom Boot Block)
22H
X
E3H
Block Protection Verification
X
X
01H (Protected),
00H (Unprotected)
Secode
Block Indicator Bit (DQ7)
X
X
80H (Factory locked),
00H (Not factory locked)
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