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參數(shù)資料
| 型號： | KAB01D100M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel |
| 中文描述： | 多芯片封裝存儲器 |
| 文件頁數(shù)： | 16/72頁 |
| 文件大?。?/td> | 1378K |
| 代理商： | KAB01D100M |
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KAB0xD100M - TxGP
Revision 1.11
August 2003
- 16 -
MCP MEMORY
SEC Only
Table 9. NAND Flash Operations Table
NOTE:
1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
R
L
WE
RE
WP
Mode
H
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(3clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(3clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/Vcc
F
(2)
Stand-by
Table 10. U
t
RAM Operations Table
1. X = V
IL
or V
IH
CS
u
ZZ
OE
WE
LB
UB
I/O
0~7
I/O
8~15
Mode
Power
H
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
L
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Deep Power
L
H
X
1)
X
1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X
1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X
1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X
1)
L
L
L
Din
Din
Word Write
Active
NOTES:
1. L = V
IL
(Low), H = V
IH
(High), V
ID
= 8.5V~12.5V, D
IN
= Data in, D
OUT
= Data out, X = Don't care.
2. WP/ACC and RESET pin are asserted at Vcc
R
±
0.3 V or Vss
±
0.3 V in the Stand-by mode.
3. Addresses must be composed of the Block address (A12 - A21).
The Block Protect and Unprotect operations may be implemented via programming equipment too.
Refer to the "Block Group Protection and Unprotection".
4. If WP/ACC
=
V
IL,
the two outermost boot blocks is protected. If WP/ACC
=
V
IH,
the two outermost boot block protection depends on whether those
blocks were last protected or unprotected using the method described in "Block Group Protection and Unprotection". If WP/ACC
=
V
HH
, all blocks
will be temporarily unprotected.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KAB01D100M-TLGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
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| KAB02D100M-TLGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB02D100M-TNGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB03D100M-TLGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
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