參數(shù)資料
型號(hào): HYB39S512400ATL
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512-Mbit Synchronous DRAM
中文描述: 512兆位同步DRAM
文件頁(yè)數(shù): 23/28頁(yè)
文件大?。?/td> 718K
代理商: HYB39S512400ATL
HYB 39S512[40/80/16]0AT(L)
512-Mbit Synchronous DRAM
Electrical Characteristics
Data Sheet
23
Rev. 1.3, 2004-03
10082003-L1GD-PVI5
Table 11
Symbol
I
DD
Specifications
7
Typ.
131
0.6
25
27
2
102
270
2.1
7.5
Typ.
123
0.6
23
26
2
97
255
2.1
8
Typ.
95
0.6
19
21
2
79
240
2.1
Unit
Note/Test
Condition
1)
1)
T
A
= 0 to 70
°
C;
V
SS
= 0 V,
V
DD
,
V
DDQ
= +3.3 V
±
0.3 V
2) These parameters depend on the cycle rate. All values are measured at 133 MHz for “-7” and “-7.5” and at 100 MHz for
“-8” components with the outputs open. Input signals are changed once during t
ck
.
3) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is
assumed and the V
DDQ
current is excluded.
4)
t
RFC
=
t
RFC(min.)
“burst refresh”.
Max.
145
3
31
35
4
123
300
4
Max.
145
3
31
35
4
123
300
4
Max.
110
3
25
30
4
100
270
4
I
DD1
I
DD2P
I
DD2N
I
DD3N
I
DD3P
I
DD4
I
DD5
I
DD6
mA
mA
mA
mA
mA
mA
mA
mA
2)
3)
2)
2)
2)
2)
2)
3)
t
RFC
=
t
RFC(min.)
Standard
4)
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