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| 型號(hào)： | HYB39S512400ATL |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512-Mbit Synchronous DRAM |
| 中文描述： | 512兆位同步DRAM |
| 文件頁(yè)數(shù)： | 22/28頁(yè) |
| 文件大?。?/td> | 718K |
| 代理商： | HYB39S512400ATL |
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HYB 39S512[40/80/16]0AT(L)
512-Mbit Synchronous DRAM
Electrical Characteristics
Data Sheet
22
Rev. 1.3, 2004-03
10082003-L1GD-PVI5
Table 9
Parameter
DC Characteristics
1)
1)
T
A
= 0 to 70
°
C
2) All voltages are referenced to
V
ss
3)
V
IH
may overshoot to
V
DDQ
+ 2.0 V for pulse width of < 4ns with 3.3 V.
V
IL
may undershoot to -2.0 V for pulse width < 4.0
ns with 3.3 V. Pulse width measured at 50% points with amplitude measured peak to DC reference.
Symbol
Values
max.
3.6
3.6
V
DDQ
+0.3
0.8
–
0.4
5
Unit
Note/
Test Condition
min.
3.0
3.0
2.0
–0.3
2.4
–
–5
Supply Voltage
I/O Supply Voltage
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= –4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
IN
<
V
DD
, all other inputs = 0 V)
Output leakage current
(DQs are disabled, 0 V <
V
OUT
<
V
DDQ
)
V
DD
V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
V
V
V
V
V
V
μ
A
2)
2)
2)3)
2)3)
2)
2)
I
OL
5
5
μ
A
Table 10
Parameter
Operating Current
Single bank, burst length 4
I
O
= 0 mA
Precharge Standby Current in Power Down Mode
CS =
V
IH,min
; CKE
≤
V
IL,max
Precharge Standby Current in Non-Power Down Mode
CS =
V
IH(min.)
, CKE
≥
V
IH(min.)
Active Power-Down Standby Current
one bank active state(max. 4 banks) CS =
V
IH(min.)
,CKE
≥
V
IH(min.)
Active Standby Current
one bank active state (max. 4 banks) CS =
V
IH(min.)
, CKE
≤
V
IL(max.)
Burst Operating Current
Read command cycling
Auto Refresh Current
Auto Refresh command cycling
t
RFC
=
t
RFC(min.)
Self Refresh Current
Self Refresh Mode, CKE=0.2V,
t
CK
= infinity
×
16
I
DD
Conditions
Symbol
I
DD1
I
DD2P
I
DD2N
I
DD3N
I
DD3P
I
DD4
I
DD5
I
DD6
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| HYB39S512800AE-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:512-Mbit Synchronous DRAM |
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