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參數(shù)資料
| 型號： | HYB39S512400ATL |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512-Mbit Synchronous DRAM |
| 中文描述： | 512兆位同步DRAM |
| 文件頁數(shù)： | 21/28頁 |
| 文件大?。?/td> | 718K |
| 代理商： | HYB39S512400ATL |
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HYB 39S512[40/80/16]0AT(L)
512-Mbit Synchronous DRAM
Electrical Characteristics
Data Sheet
21
Rev. 1.3, 2004-03
10082003-L1GD-PVI5
4
Electrical Characteristics
4.1
Operating Conditions
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 7
Parameter
Absolute Maximum Ratings
Symbol
Values
Unit
Note/ Test Condition
min.
–1.0
–1.0
0
–55
–
–
max.
+4.6
+4.6
+70
+150
1
50
Voltage on I/O pins relative to
V
SS
Power supply voltage
Operating Temperature
Storage temperature range
Power dissipation per SDRAM component
Data out current (short circuit)
V
IN
,
V
OUT
V
DD
,
V
DDQ
T
A
T
STG
P
D
I
OUT
V
V
°
C
°
C
W
mA
Table 8
Parameter
Input and Output Capacitances
1)
1)
T
A
= 0 to 70
°
C;
V
DD,
V
DDQ
= 3.3 V
±
0.3 V,
f
= 1 MHz
2) Capacitance values are shown for TSOP-54 packages. Capacitance values for TFBGA packages are lower by 0.5 pF
Symbol
Values
2)
Unit
min.
2.5
2.5
max.
3.5
3.8
Input Capacitance: CK, CK
Input capacitance
(A0-A12, BA0,BA1,RAS, CAS, WE, CS, CKE, DQM)
Input / Output capacitance (DQ)
C
I1
C
I2
pF
pF
C
I0
4.0
6.0
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S512800AE-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:512-Mbit Synchronous DRAM |
| HYB39S512800AT | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512-Mbit Synchronous DRAM |
| HYB39S512800AT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512-Mbit Synchronous DRAM |
| HYB39S512800AT-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:512-Mbit Synchronous DRAM |
| HYB39S512800AT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512-Mbit Synchronous DRAM |
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