參數資料
型號: HYB18T512160AF-3.7
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512-Mbit DDR2 SDRAM
中文描述: 512兆位DDR2 SDRAM的
文件頁數: 27/117頁
文件大?。?/td> 2102K
代理商: HYB18T512160AF-3.7
Data Sheet
27
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
Functional Description
3
Functional Description
3.1
Simplified State Diagram
Figure 7
Simplified State Diagram
Note:This Simplified State Diagram is intended to
provide a floorplan of the possible state
transitions and the commands to control them. In
particular situations involving more than one
bank, enabling / disabling on-die termination,
Power-Down entry / exit, timing restrictions
during state transitions - among other things - are
not captured in full detail.
-0&4
!UTOMATIC 3EQUENCE
#OMMAND 3EQUENCE
0RECHARGING
7RITING
WITH !0
0RECHARGE
0OWER
$OWN
/#$
CALIBRATION
2EADING WITH
!0
72!
2$!
72!
2$!
2EAD
7RITE
020 2!
020 2!
020 2!
2$!
2EAD
7RITE
7RITING
2EADING
7RITE
2EAD
!CTIVE 0OWER
$OWN
"ANK
!CTIVE
#+%,
#+%(
!CTIVATING
#+%,
#+%,
% -23
3ETTING
-23 OR
%-23
!#4
02
#+%,
3ELF
2EFRESH
32&
#+%(
2%&
#+%,
2EFRESHING
#+%,
)DLE
!LL BANKS
PRECHARGED
#+%,
#+%(
)NITIALIZATION
3EQUENCE
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參數描述
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HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP(0.300",7.62mm) 供應商設備封裝:8-PDIP 包裝:管件 產品目錄頁面:1449 (CN2011-ZH PDF)