參數(shù)資料
型號： HYB18T512160AF-3.7
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512-Mbit DDR2 SDRAM
中文描述： 512兆位DDR2 SDRAM的
文件頁數(shù)： 18/117頁
文件大小： 2102K
代理商： HYB18T512160AF-3.7
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
Pin Configuration and Block Diagrams
Data Sheet
18
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
Power Supply
B3
DM
I
SSTL
Data Mask
Note:DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH coincident with that
input data during a write access. DM is sampled on both
edges of DQS. Although DM pins are input only, the DM
loading matches the DQ and DQS loading. LDM and UDM
are the input mask signals for
×
16 components and control
the lower or upper bytes. For
×
8 components the data mask
function is disabled, when RDQS/RDQS are enabled by
EMRS(1) command.
Data Mask
×
16 organization
B3
F3
Power Supplies
×
4/
×
8
/×
16 organizations
A9,C1,C3,C7,
C9
A1
V
DD
A7,B2,B8,D2,
D8
A3,E3
V
SS
Power Supplies
×
4/
×
8 organizations
E2
V
REF
E1
V
DDL
E9,H9,L1
V
DD
E7
V
SSDL
J1,K9
V
SS
Power Supplies
×
16 organization
J2
V
REF
E9, G1, G3,
G7, G9
J1
V
DDL
E1, J9, M9, R1
V
DD
E7, F2, F8, H2,
H8
J7
V
SSDL
J3,N1,P9
V
SS
Not Connected
×
4/
×
8 organizations
G1, L3,L7, L8
NC
UDM
LDM
I
I
SSTL
SSTL
Data Mask Upper Byte
Data Mask Lower Byte
V
DDQ
PWR
–
I/O Driver Power Supply
PWR
PWR
–
–
Power Supply
Power Supply
V
SSQ
PWR
–
AI
PWR
PWR
PWR
PWR
–
–
–
–
–
I/O Reference Voltage
Power Supply
Power Supply
Power Supply
Power Supply
AI
PWR
–
–
I/O Reference Voltage
I/O Driver Power Supply
V
DDQ
PWR
PWR
PWR
–
–
–
Power Supply
Power Supply
Power Supply
V
SSQ
PWR
PWR
–
–
Power Supply
Power Supply
NC
–
Not Connected
Note:No internal electrical connection is present
Not Connected
×
4 organization
A2, B1, B9,
D1, D9
NC
NC
–
Not Connected
Table 4
Ball#/Pin#
Pin Configuration of DDR SDRAM
Name
Pin
Type
Buffer
Type
Function
相關(guān)PDF資料
PDF描述
HYB18T512160AF-3S 512-Mbit DDR2 SDRAM
HYB18T512400AF-3 512-Mbit DDR2 SDRAM
HYB18T512400AF-3S 512-Mbit DDR2 SDRAM
HYB18T512800AF-3 512-Mbit DDR2 SDRAM
HYB18T512800AF-3.7 512-Mbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512161BF-25 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA
HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA
HYB18T512400BF-3S 制造商:Qimonda 功能描述:
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*