參數(shù)資料
型號: HB52F89EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內存(64 MB的未緩沖同步的DRAM內存)
文件頁數(shù): 55/71頁
文件大小: 906K
代理商: HB52F89EM
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
55
Write command to Precharge command interval (same bank):
When the precharge command is executed
for the same bank as the write command that preceded it, the minimum interval between the two commands
is 1 clock.
However, if the burst write operation is unfinished, the input data must be masked by means of
DQMB for assurance of the clock defined by t
DPL
.
WRITE to PRECHARGE Command Interval (same bank):
Burst Length = 4 (To stop write operation)
Burst Length = 4 (To write all data)
Bank active command interval:
1. Same bank:
The interval between the two bank-active commands must be no less than t
RC
.
CK
Command
Din
WRIT
PRE/PALL
t
DPL
DQMB
CK
in A0
in A1
Command
Din
WRIT
PRE/PALL
DQMB
t
DPL
CK
in A0
in A1
in A2
Command
Din
WRIT
PRE/PALL
in A3
DQMB
t
DPL
相關PDF資料
PDF描述
HB52R1289E22 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM)
HB52R168DB 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
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