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參數(shù)資料
| 型號(hào)： | HB52F89EM |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無(wú)緩沖SDRAM的內(nèi)存（64 MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁(yè)數(shù)： | 51/71頁(yè) |
| 文件大?。?/td> | 906K |
| 代理商： | HB52F89EM |
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HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
51
WRITE to READ Command Interval (1)
WRITE to READ Command Interval (2)
2. Same bank, different ROW address:
When the ROW address changes, consecutive read commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank:
When the bank changes, the read command can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. However, in the case of a burst write,
data will continue to be written until one clock before the read command is executed (as in the case of the
same bank and the same address).
Read with auto precharge to Read command interval
1. Different bank:
When some banks are in the active state, the second read command (another bank) is
executed. Even when the first read with auto-precharge is a burst read that is not yet finished, the data read
by the second command is valid. The internal auto-precharge of one bank starts at the next clock of the second
command.
Read with Auto Precharge to Read Command Interval
(Different bank)
CK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CE
Latency
DQMB
Burst Write Mode
CE
Latency = 3
Burst Length = 4
Bank 0
CK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CE
Latency
in A1
DQMB
Burst Write Mode
CE
Latency = 3
Burst Length = 4
Bank 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52R1289E22 | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22 | 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM) |
| HB52R168DB | 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R1289E22 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E2-A6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R1289E2-B6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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