參數(shù)資料
型號: HB52F89EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64 MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 11/71頁
文件大小: 906K
代理商: HB52F89EM
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
11
Byte
No.
17
Function described
SDRAM device attributes:
number of banks on SDRAM
device
SDRAM device attributes:
CE latency
SDRAM device attributes:
S latency
SDRAM device attributes:
W latency
SDRAM module attributes
SDRAM device attributes:
General
SDRAM cycle time
(2nd highest CE latency)
10 ns
SDRAM access from Clock
(2nd highest CE latency)
6 ns
SDRAM cycle time
(3rd highest CE latency)
Undefined
SDRAM access from Clock
(3rd highest CE latency)
Undefined
Minimum row precharge time 0
Row active to row active min 0
RE to CE delay min
Minimum RE pulse width
Density of each bank on
module
(HB52F88EM/89EM)
(HB52F168EN/169EN)
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
0
0
0
0
0
Com-
ments
4
1
0
0
04
18
0
0
0
0
0
1
1
0
06
2, 3
19
0
0
0
0
0
0
0
1
01
0
20
0
0
0
0
0
0
0
1
01
0
21
22
0
0
0
0
0
0
0
0
0
1
0
1
0
1
0
0
00
0E
Non buffer
V
CC
±
10%
23
1
0
1
0
0
0
0
0
A0
24
0
1
1
0
0
0
0
0
60
25
0
0
0
0
0
0
0
0
00
26
0
0
0
0
0
0
0
0
00
27
28
29
30
31
0
0
0
0
0
0
0
1
1
0
1
0
0
1
0
1
1
1
1
1
0
1
0
0
0
1
0
1
14
0F
14
2D
20 ns
15 ns
20 ns
45 ns
1 bank
64 M byte
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
10
10
2 bank
64 M byte
1.5 ns
32
Address and command
signal input setup time
Address and command
signal input hold time
Data signal input setup time
Data signal input hold time
36 to 61 Superset information
62
SPD data revision code
0
0
0
1
0
1
0
1
15
33
0
0
0
0
1
0
0
0
08
0.8 ns
34
35
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
1
0
0
1
0
0
0
0
0
0
1
1
0
0
0
15
08
00
02
1.5 ns
0.8 ns
Future use
JEDEC2
相關(guān)PDF資料
PDF描述
HB52R1289E22 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM)
HB52R168DB 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
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