參數(shù)資料
型號(hào)： HB52F89EM
廠商： Hitachi,Ltd.
英文描述： 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述： 64 MB的無緩沖SDRAM的內(nèi)存（64 MB的未緩沖同步的DRAM內(nèi)存）
文件頁數(shù)： 33/71頁
文件大?。?/td> 906K
代理商： HB52F89EM
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
33
Command Operation
Command Truth Table
The SDRAM module recognizes the following commands specified by the S, RE, CE, W and address pins.
Note: H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
. V: Valid address input
Ignore command [DESL]:
When this command is set (S is High), the SDRAM module ignore command
input at the clock. However, the internal status is held.
No operation [NOP]:
This command is not an execution command. However, the internal operations con-
tinue.
Burst stop in full-page [BST]:
This command stops a full-page burst operation (burst length = full-page)
and is illegal otherwise. When data input/output is completed for a full page of data, it automatically returns
to the start address, and input/output is performed repeatedly.
Column address strobe and read command [READ]:
This command starts a read operation. In addition,
the start address of burst read is determined by the column address and the bank select address (BA). After
the read operation, the output buffer becomes High-Z.
Read with auto-precharge [READ A]:
This command automatically performs a precharge operation after
a burst read with a burst length of 1, 2, 4 or 8. When the burst length is full-page, this command is illegal.
Column address strobe and write command [WRIT]:
This command starts a write operation. When the
burst write mode is selected, the column address and the bank select address (BA) become the burst write start
address. When the single write mode is selected, data is only written to the location specified by the column
address and the bank select address (BA).
Write with auto-precharge [WRIT A]:
This command automatically performs a precharge operation after
a burst write with a length of 1, 2, 4 or 8, or after a single write operation. When the burst length is full-page,
this command is illegal.
CKE
Command
Ignore command
No operation
Burst stop in full page
Column address and read command READ
Read with auto-precharge
Column address and write command WRIT
Write with auto-precharge
Row address strobe and bank active ACTV
Precharge select bank
Precharge all bank
Refresh
Mode register set
Symbol
DESL
NOP
BST
n - 1 n
H
H
H
H
H
H
H
H
H
H
S
H
L
L
L
L
L
L
L
L
L
L
L
RE
×
H
H
H
H
H
H
L
L
L
L
L
CE
×
H
H
L
L
L
L
H
H
H
L
L
W
×
H
L
H
H
L
L
H
L
L
H
L
A12/
A13
×
×
×
V
V
V
V
V
V
×
×
V
A10
×
×
×
L
H
L
H
V
L
H
×
V
A0
to A11
×
×
×
V
V
V
V
V
×
×
×
V
×
×
×
×
×
×
×
×
×
×
V
×
READ A
WRIT A
PRE
PALL
REF/SELF H
MRS
H
相關(guān)PDF資料
PDF描述
HB52R1289E22 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM)
HB52R168DB 128 MB Unbuffered SDRAM S.O.DIMM(128 MB 未緩沖同步DRAM S.O.DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52R1289E22 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E2-A6A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52R1289E2-B6A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
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