參數(shù)資料
型號: HB52F89EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64 MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 31/71頁
文件大?。?/td> 906K
代理商: HB52F89EM
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
31
Relationship Between Frequency and Minimum Latency
Notes:
1.I
RCD
to I
RRD
are recommended value.
2.Be valid [DSEL] or [NOP] at next command of self refresh exit.
3.Except [DSEL] and [NOP]
Parameter
HB52F88EM/89EM/
168EN/169EN-75F
133
CE latency = 3
100
CE latency = 2
Frequency (MHz)
t
CK
(ns)
Active command to column command
(same bank)
Active command to active command
(same bank)
HITA-
CHI-
Symbol
I
RCD
PC100
Sym-
bol
7.5
3
10
2
Notes
1
I
RC
9
7
= [I
RAS
+
I
RP
]
1
1
Active command to precharge command
(same bank)
Precharge command to active command
(same bank)
Write recovery or data-in to precharge
command (same bank)
Active command to active command
(different bank)
Self refresh exit time
Last data in to active command
(Auto precharge, same bank)
Self refresh exit to command input
I
RAS
6
5
I
RP
3
2
1
I
DPL
Tdpl
2
1
1
I
RRD
2
2
1
I
SREX
I
APW
Tsrx
Tdal
1
5
1
4
2
= [I
DPL
+
I
RP
]
= [I
RC
]
3
I
SEC
9
7
Precharge command to high impedance I
HZP
Last data out to active command (auto
precharge) (same bank)
Last data out to precharge (early
precharge)
Column command to column command
Write command to data in latency
DQMB to data in
DQMB to data out
CKE to CK disable
Register set to active command
S to command disable
Power down exit to command input
Burst stop to output valid data hold
Burst stop to output high impedance
Burst stop to write data ignore
Troh
3
1
2
1
I
APR
I
EP
–2
–1
I
CCD
I
WCD
I
DID
I
DOD
I
CLE
I
RSA
I
CDD
I
PEC
I
BSR
I
BSH
I
BSW
Tccd
Tdwd
Tdqm
Tdqz
Tcke
Tmrd
1
0
0
2
1
1
0
1
2
3
0
1
0
0
2
1
1
0
1
1
2
0
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