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參數(shù)資料
| 型號(hào)： | GS816136 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM) |
| 中文描述： | 16Mb的流水線和流量，通過(guò)同步唑的SRAM（1,600位流水線式和流通型同步唑靜態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 27/32頁(yè) |
| 文件大?。?/td> | 584K |
| 代理商： | GS816136 |
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Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
27/32
1999, Giga Semiconductor, Inc.
Preliminary
GS816118/36T-225/200/180/166/150/133
JTAG Port Recommended Operating Conditions and DC Characteristics
JTAG Port AC Test Conditions
Parameter
Symbol
V
IHT
V
ILT
I
INTH
I
INTL
I
OLT
V
OHT
V
OLT
Min.
0.7 * V
DD
Max.
V
DD
+0.3
0.3 * V
DD
Unit Notes
Test Port Input High Voltage
V
1, 2
Test Port Input Low Voltage
–
0.3
V
1, 2
TMS, TCK and TDI Input Leakage Current
–
300
1
uA
3
TMS, TCK and TDI Input Leakage Current
–
1
1
uA
4
TDO Output Leakage Current
–
1
1
uA
5
Test Port Output High Voltage
1.7
—
V
6, 7
Test Port Output Low Voltage
—
0.4
V
6, 8
Note:
1.
2.
3.
4.
5.
6.
7.
8.
This device features input buffers compatible with 2.5 V I/O drivers.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tTKC.
V
DD
≥
V
IN
≥
V
IL
0 V
≤
V
IN
≤
V
IL
Output Disable, V
OUT
= 0 to V
DD
The TDO output driver is served by the V
DD
supply.
I
OH
=
–
4 mA
I
OL
= + 4 mA
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as as shown unless otherwise noted.
Parameter
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Conditions
2.3 V
0.2 V
1 V/ns
1.25 V
1.25 V
DQ
V
T
= 1.25 V
50
30pF
*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816118 | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM) |
| GS8161E18BD-200I | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200I | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-250 | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-250I | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816136BD-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 165FBGA - Trays |
| GS816136BD-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 165FBGA - Trays |
| GS816136BD-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 165FPBGA - Trays |
| GS816136BD-150V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 165FPBGA - Trays |
| GS816136BD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 512KX36 6.5NS/3NS 165FBGA - Trays |
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