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參數(shù)資料
| 型號(hào)： | GS816136 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM) |
| 中文描述： | 16Mb的流水線和流量，通過(guò)同步唑的SRAM（1,600位流水線式和流通型同步唑靜態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 16/32頁(yè) |
| 文件大?。?/td> | 584K |
| 代理商： | GS816136 |
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Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
16/32
1999, Giga Semiconductor, Inc.
Preliminary
GS816118/36T-225/200/180/166/150/133
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-225
-200
-180
-166
-150
-133
Unit
Min
4.4
—
1.5
Max
—
2.5
—
Min
5.0
—
1.5
Max
—
3.0
—
Min
5.5
—
1.5
Max
—
3.2
—
Min
6.0
—
1.5
Max
—
3.5
—
Min
6.7
—
1.5
Max
—
3.8
—
Min
7.5
—
1.5
Max
—
4.0
—
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Flow
Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
8.5
—
3.0
—
7.0
—
10.0
—
3.0
—
7.5
—
10.0
—
3.0
—
8.0
—
10.0
—
3.0
—
8.5
—
10.0
—
3.0
—
10.0
—
15.0
—
3.0
—
11.0
—
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock HIGH Time
Clock LOW Time
1.3
1.5
—
—
1.3
1.5
—
—
1.3
1.5
—
—
1.3
1.5
—
—
1.5
1.7
—
—
1.7
2
—
—
ns
ns
Clock to Output in High-Z
tHZ
1
tOE
1.5
2.5
1.5
3.0
1.5
3.2
1.5
3.5
1.5
3.8
1.5
4.0
ns
G to Output Valid
—
2.5
—
3.2
—
3.2
—
3.5
—
3.8
—
4.0
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
tS
tH
—
2.5
—
3.0
—
3.2
—
3.5
—
3.8
—
4.0
ns
Setup time
Hold time
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
ns
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
tZZR
1
—
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
100
—
100
—
100
—
100
—
100
—
100
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816118 | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM) |
| GS8161E18BD-200I | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-200I | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-250 | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18BGD-250I | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816136BD-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 165FBGA - Trays |
| GS816136BD-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 165FBGA - Trays |
| GS816136BD-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 165FPBGA - Trays |
| GS816136BD-150V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 165FPBGA - Trays |
| GS816136BD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 512KX36 6.5NS/3NS 165FBGA - Trays |
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