參數(shù)資料
型號: GS816136
廠商: GSI TECHNOLOGY
英文描述: 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
中文描述: 16Mb的流水線和流量,通過同步唑的SRAM(1,600位流水線式和流通型同步唑靜態(tài)內存)
文件頁數(shù): 17/32頁
文件大?。?/td> 584K
代理商: GS816136
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/32
1999, Giga Semiconductor, Inc.
Preliminary
GS816118/36T-225/200/180/166/150/133
CK
ADSP
ADSC
ADV
GW
BW
WR2
WR3
WR1
WR1
WR2
WR3
tKC
Single Write
Burst Write
t
KL
t
KH
tS tH
tS tH
tS tH
tS tH
tS tH
tStH
tS tH
Write specified byte for 2
A
and all bytes for 2
B
, 2
C
& 2
D
ADV must be inactive for ADSP Write
ADSC initiated write
ADSP is blocked by E inactive
A
0
–An
B
A
–B
D
DQ
A
–DQ
D
Write
Deselected
Write Cycle Timing
E
1
tS tH
E
1
only sampled with ADSP or ADSC
E
1
masks ADSP
G
D2
A
D2
B
D2
C
D2
D
D3
A
D1
A
Hi-Z
tS tH
相關PDF資料
PDF描述
GS816118 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8161E18BD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
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