參數(shù)資料
型號: GS816136
廠商: GSI TECHNOLOGY
英文描述: 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
中文描述: 16Mb的流水線和流量,通過同步唑的SRAM(1,600位流水線式和流通型同步唑靜態(tài)內(nèi)存)
文件頁數(shù): 11/32頁
文件大?。?/td> 584K
代理商: GS816136
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
11/32
1999, Giga Semiconductor, Inc.
Preliminary
GS816118/36T-225/200/180/166/150/133
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS816118 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8161E18BD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
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